Stable ohmic contacts to n-GaAs using ion-beam mixing

Stable ohmic contacts to n-type (100) GaAs have been fabricated with thin vapor deposited Ni films. The Ni GaAs structure was subjected to Ge + ion bombardment of sufficient energy and dose to induce a mixing effect at the Ni-GaAs interface. A high-intensity incoherent lamp was used to vacuum anneal...

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Bibliographic Details
Published in:Materials letters 1985-01, Vol.3 (7), p.294-298
Main Authors: Smith, S.R., Solomon, J.S.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Stable ohmic contacts to n-type (100) GaAs have been fabricated with thin vapor deposited Ni films. The Ni GaAs structure was subjected to Ge + ion bombardment of sufficient energy and dose to induce a mixing effect at the Ni-GaAs interface. A high-intensity incoherent lamp was used to vacuum anneal the contact zone which was then characterized for chemical, physical, and electrical properties. The resulting structure consisted primarily of a Ni 2 GaAs layer on GaAs with a very thin interfacial layer of Ni 2 GeAs. This process specifically addresses the shortcomings inherent in the Ni Au-Ge eutectic alloy contact, namely, electromigration of the Au from the interface, phase separation and Au coalescence.
ISSN:0167-577X
1873-4979
DOI:10.1016/0167-577X(85)90025-4