Chemical stability of vanadium boride with aluminum

The stability of r.f.-sputtered vanadium boride thin films is investigated for application as diffusion barriers between silicon and aluminum layers. The composition of VB x barriers is uniform in depth and varies from x = 1.5 to x = 2.7 depending on the sputtering power. The phase VB 2 is present a...

Full description

Saved in:
Bibliographic Details
Published in:Thin solid films 1988-12, Vol.166 (1-2), p.29-36
Main Authors: Kolawa, E., Molarius, J.M., Flick, W., Nieh, C.W., Tran, L., Nicolet, M.-A., So, F.C.T., Wei, J.C.S.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The stability of r.f.-sputtered vanadium boride thin films is investigated for application as diffusion barriers between silicon and aluminum layers. The composition of VB x barriers is uniform in depth and varies from x = 1.5 to x = 2.7 depending on the sputtering power. The phase VB 2 is present at all compositions. Metallurgical interactions in the Si/VB 2.0/Al and SiO 2/VB 2.0/Al systems are studied by backscattering spectrometry and electrical measurements on shallow n +p junctions. We find that VB 2.0 films prevent the interdiffusion and reaction between aluminum overlayers and silicon on heat treatment at up to 500°C for 30 min in vacuum.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(88)90363-X