Combining resonant tunneling diodes for signal processing and multilevel logic

A device with multiple negative differential resistances was obtained by combining two AlInAs/InGaAs based resonant tunneling diodes in series. Equal peak currents and large current peak-to-valley ratios were demonstrated at room temperature. Three stable operating points were identified for trileve...

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Bibliographic Details
Published in:Applied physics letters 1988-05, Vol.52 (20), p.1684-1685
Main Authors: LAKHANI, A. A, POTTER, R. C
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A device with multiple negative differential resistances was obtained by combining two AlInAs/InGaAs based resonant tunneling diodes in series. Equal peak currents and large current peak-to-valley ratios were demonstrated at room temperature. Three stable operating points were identified for trilevel logic applications and a multiply-by-three circuit was demonstrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99018