A complete quantitative model of the isothermal vapor phase epitaxy of (Hg, Cd) Te

A quantitative model of isothermal vapor phase epitaxy is proposed. It can be applied to both closed and open tube systems. This model enables the prediction of compositional profiles of the layers grown by isothermal vapor phase epitaxy with dependence on the growth parameters and thermodynamical d...

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Bibliographic Details
Published in:Journal of electronic materials 1988-05, Vol.17 (3), p.223-228
Main Authors: DJURIC, Z, DJINOVIC, Z, LAZIC, Z, PIOTROWSKI, J
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:A quantitative model of isothermal vapor phase epitaxy is proposed. It can be applied to both closed and open tube systems. This model enables the prediction of compositional profiles of the layers grown by isothermal vapor phase epitaxy with dependence on the growth parameters and thermodynamical data of the (Hg,Cd)Te system. The dependence of compositional profiles of the ISOVPE layers on temperature and time of deposition, source to substrate spacing, mercury and inert gas pressures are discussed for both solid and liquid sources.
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02652182