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The nature of negative linear expansion in layer crystals C, Bn, GaS, GaSe and InSe
Experimental investigations of thermal expansion parallel and perpendicular to the layers plane of layer crystals GaS, GaSe and InSe are described. The obtained results are analized together with known thermal expansion data on graphite, C, and boron nitride, BN. Theoretical calculations of linear e...
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Published in: | Solid state communications 1985-01, Vol.53 (11), p.967-971 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Experimental investigations of thermal expansion parallel and perpendicular to the layers plane of layer crystals GaS, GaSe and InSe are described. The obtained results are analized together with known thermal expansion data on graphite, C, and boron nitride, BN. Theoretical calculations of linear expansion coefficients are carried out on the basis of the model of highly anisotropic crystal. It is shown, that the negative thermal expansion in the layer plane, typical of layer crystals, is due to “bending” waves, acoustic waves propagating in the layer plane and polarized perpendicular to this plane (TA
⊥ mode) |
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ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/0038-1098(85)90470-3 |