The role of nonuniform dielectric permittivity in the determination of heterojunction band offsets by C–V profiling through isotype heterojunctions

Up to now, C–V profiling through isotype heterojunctions has been performed assuming a uniform dielectric permittivity throughout the heterostructure. We extend the interpretation of C–V data to the case of a semiconductor with position-dependent dielectric permittivity, and we show that the variati...

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Bibliographic Details
Published in:Solid-state electronics 1985-01, Vol.28 (10), p.1015-1017
Main Authors: Babic, Dubravko I., Kroemer, Herbert
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Up to now, C–V profiling through isotype heterojunctions has been performed assuming a uniform dielectric permittivity throughout the heterostructure. We extend the interpretation of C–V data to the case of a semiconductor with position-dependent dielectric permittivity, and we show that the variation of the dielectric permittivity across an isotype heterojunction interface has no effect on the determination of the heterojunction band discontinuity and the interface charge density.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(85)90032-2