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Crystallization of amorphous antimony layers on as-deposited ultrathin sublayers of silver
We have directly observed, by optical microscopy, the crystallization process of an amorphous antimony layer 3.4–8.9 nm thick prepared on an as-deposited layer of silver whose thickness ranges from 0.7 × 10 −2 to 8.5 × 10 −2 nm. A whole specimen is deposited onto a cover glass in a vacuum of 3 × 10...
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Published in: | Thin solid films 1988-12, Vol.167 (1), p.223-232 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We have directly observed, by optical microscopy, the crystallization process of an amorphous antimony layer 3.4–8.9 nm thick prepared on an as-deposited layer of silver whose thickness ranges from 0.7 × 10
−2 to 8.5 × 10
−2 nm. A whole specimen is deposited onto a cover glass in a vacuum of 3 × 10
−4 Pa. The averaged growth rate
v of crystallites nucleated in the amorphous antimony layer is measured as a function of the reciprocal thickness
d
Sb
−1 of the antimony layer and also as a function of the substrate temperature
T
s at
d
Sb = 3.7 and 4.5 nm.
v decreases monotinically with increasing
d
Sb
-1 in accordance with a model previously presented (M. Hashimoto,
Thin Solid Films, 116 (1984) 373–381). When the thickness
d
Ag of the silver sublayer is equal to 8.5 × 10
−2 nm such parameters as the thicknesses
d
s0 and
d
v0 of surface regions near the substrate and the vacuum and the growth rates
u
s and
u
v at surfaces adjacent to the substrate and the vacuum are estimated to be 5.6 nm and 2.0 nm and 10 μm s
−1 and 0.21 μm s
−1.
Effective values of the activation energy for crystallization are estimated from the Arrhenius plot of
v from 30 to 60°C to be, for example, 0.8 eV at
d
Sb = 3.7 nm and 0.6 eV at
d
Sb = 4.5 nm when
d
Ag is 8.5 × 10
-2 nm. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/0040-6090(88)90499-3 |