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Crystallization of amorphous antimony layers on as-deposited ultrathin sublayers of silver

We have directly observed, by optical microscopy, the crystallization process of an amorphous antimony layer 3.4–8.9 nm thick prepared on an as-deposited layer of silver whose thickness ranges from 0.7 × 10 −2 to 8.5 × 10 −2 nm. A whole specimen is deposited onto a cover glass in a vacuum of 3 × 10...

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Published in:Thin solid films 1988-12, Vol.167 (1), p.223-232
Main Authors: Hashimoto, Mituru, Umezawa, Kiyoshi
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Language:English
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description We have directly observed, by optical microscopy, the crystallization process of an amorphous antimony layer 3.4–8.9 nm thick prepared on an as-deposited layer of silver whose thickness ranges from 0.7 × 10 −2 to 8.5 × 10 −2 nm. A whole specimen is deposited onto a cover glass in a vacuum of 3 × 10 −4 Pa. The averaged growth rate v of crystallites nucleated in the amorphous antimony layer is measured as a function of the reciprocal thickness d Sb −1 of the antimony layer and also as a function of the substrate temperature T s at d Sb = 3.7 and 4.5 nm. v decreases monotinically with increasing d Sb -1 in accordance with a model previously presented (M. Hashimoto, Thin Solid Films, 116 (1984) 373–381). When the thickness d Ag of the silver sublayer is equal to 8.5 × 10 −2 nm such parameters as the thicknesses d s0 and d v0 of surface regions near the substrate and the vacuum and the growth rates u s and u v at surfaces adjacent to the substrate and the vacuum are estimated to be 5.6 nm and 2.0 nm and 10 μm s −1 and 0.21 μm s −1. Effective values of the activation energy for crystallization are estimated from the Arrhenius plot of v from 30 to 60°C to be, for example, 0.8 eV at d Sb = 3.7 nm and 0.6 eV at d Sb = 4.5 nm when d Ag is 8.5 × 10 -2 nm.
doi_str_mv 10.1016/0040-6090(88)90499-3
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Metallurgy</topic><topic>Nondestructive testing</topic><topic>Physics</topic><topic>Specific materials</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hashimoto, Mituru</creatorcontrib><creatorcontrib>Umezawa, Kiyoshi</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hashimoto, Mituru</au><au>Umezawa, Kiyoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crystallization of amorphous antimony layers on as-deposited ultrathin sublayers of silver</atitle><jtitle>Thin solid films</jtitle><date>1988-12-15</date><risdate>1988</risdate><volume>167</volume><issue>1</issue><spage>223</spage><epage>232</epage><pages>223-232</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>We have directly observed, by optical microscopy, the crystallization process of an amorphous antimony layer 3.4–8.9 nm thick prepared on an as-deposited layer of silver whose thickness ranges from 0.7 × 10 −2 to 8.5 × 10 −2 nm. 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subjects Analysing. Testing. Standards
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Measurement of properties and materials state
Metals, semimetals and alloys
Metals. Metallurgy
Nondestructive testing
Physics
Specific materials
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Crystallization of amorphous antimony layers on as-deposited ultrathin sublayers of silver
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