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Crystallization of amorphous antimony layers on as-deposited ultrathin sublayers of silver
We have directly observed, by optical microscopy, the crystallization process of an amorphous antimony layer 3.4–8.9 nm thick prepared on an as-deposited layer of silver whose thickness ranges from 0.7 × 10 −2 to 8.5 × 10 −2 nm. A whole specimen is deposited onto a cover glass in a vacuum of 3 × 10...
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Published in: | Thin solid films 1988-12, Vol.167 (1), p.223-232 |
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creator | Hashimoto, Mituru Umezawa, Kiyoshi |
description | We have directly observed, by optical microscopy, the crystallization process of an amorphous antimony layer 3.4–8.9 nm thick prepared on an as-deposited layer of silver whose thickness ranges from 0.7 × 10
−2 to 8.5 × 10
−2 nm. A whole specimen is deposited onto a cover glass in a vacuum of 3 × 10
−4 Pa. The averaged growth rate
v of crystallites nucleated in the amorphous antimony layer is measured as a function of the reciprocal thickness
d
Sb
−1 of the antimony layer and also as a function of the substrate temperature
T
s at
d
Sb = 3.7 and 4.5 nm.
v decreases monotinically with increasing
d
Sb
-1 in accordance with a model previously presented (M. Hashimoto,
Thin Solid Films, 116 (1984) 373–381). When the thickness
d
Ag of the silver sublayer is equal to 8.5 × 10
−2 nm such parameters as the thicknesses
d
s0 and
d
v0 of surface regions near the substrate and the vacuum and the growth rates
u
s and
u
v at surfaces adjacent to the substrate and the vacuum are estimated to be 5.6 nm and 2.0 nm and 10 μm s
−1 and 0.21 μm s
−1.
Effective values of the activation energy for crystallization are estimated from the Arrhenius plot of
v from 30 to 60°C to be, for example, 0.8 eV at
d
Sb = 3.7 nm and 0.6 eV at
d
Sb = 4.5 nm when
d
Ag is 8.5 × 10
-2 nm. |
doi_str_mv | 10.1016/0040-6090(88)90499-3 |
format | article |
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−2 to 8.5 × 10
−2 nm. A whole specimen is deposited onto a cover glass in a vacuum of 3 × 10
−4 Pa. The averaged growth rate
v of crystallites nucleated in the amorphous antimony layer is measured as a function of the reciprocal thickness
d
Sb
−1 of the antimony layer and also as a function of the substrate temperature
T
s at
d
Sb = 3.7 and 4.5 nm.
v decreases monotinically with increasing
d
Sb
-1 in accordance with a model previously presented (M. Hashimoto,
Thin Solid Films, 116 (1984) 373–381). When the thickness
d
Ag of the silver sublayer is equal to 8.5 × 10
−2 nm such parameters as the thicknesses
d
s0 and
d
v0 of surface regions near the substrate and the vacuum and the growth rates
u
s and
u
v at surfaces adjacent to the substrate and the vacuum are estimated to be 5.6 nm and 2.0 nm and 10 μm s
−1 and 0.21 μm s
−1.
Effective values of the activation energy for crystallization are estimated from the Arrhenius plot of
v from 30 to 60°C to be, for example, 0.8 eV at
d
Sb = 3.7 nm and 0.6 eV at
d
Sb = 4.5 nm when
d
Ag is 8.5 × 10
-2 nm.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/0040-6090(88)90499-3</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Analysing. Testing. Standards ; Applied sciences ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Measurement of properties and materials state ; Metals, semimetals and alloys ; Metals. Metallurgy ; Nondestructive testing ; Physics ; Specific materials ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Thin solid films, 1988-12, Vol.167 (1), p.223-232</ispartof><rights>1988</rights><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-f810c0417770bbe0238bda271f67857c0bce6931a9cb2d66a9ae4137643fccc53</citedby><cites>FETCH-LOGICAL-c364t-f810c0417770bbe0238bda271f67857c0bce6931a9cb2d66a9ae4137643fccc53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/0040609088904993$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3555,3632,27924,27925,46004,46012</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7130262$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hashimoto, Mituru</creatorcontrib><creatorcontrib>Umezawa, Kiyoshi</creatorcontrib><title>Crystallization of amorphous antimony layers on as-deposited ultrathin sublayers of silver</title><title>Thin solid films</title><description>We have directly observed, by optical microscopy, the crystallization process of an amorphous antimony layer 3.4–8.9 nm thick prepared on an as-deposited layer of silver whose thickness ranges from 0.7 × 10
−2 to 8.5 × 10
−2 nm. A whole specimen is deposited onto a cover glass in a vacuum of 3 × 10
−4 Pa. The averaged growth rate
v of crystallites nucleated in the amorphous antimony layer is measured as a function of the reciprocal thickness
d
Sb
−1 of the antimony layer and also as a function of the substrate temperature
T
s at
d
Sb = 3.7 and 4.5 nm.
v decreases monotinically with increasing
d
Sb
-1 in accordance with a model previously presented (M. Hashimoto,
Thin Solid Films, 116 (1984) 373–381). When the thickness
d
Ag of the silver sublayer is equal to 8.5 × 10
−2 nm such parameters as the thicknesses
d
s0 and
d
v0 of surface regions near the substrate and the vacuum and the growth rates
u
s and
u
v at surfaces adjacent to the substrate and the vacuum are estimated to be 5.6 nm and 2.0 nm and 10 μm s
−1 and 0.21 μm s
−1.
Effective values of the activation energy for crystallization are estimated from the Arrhenius plot of
v from 30 to 60°C to be, for example, 0.8 eV at
d
Sb = 3.7 nm and 0.6 eV at
d
Sb = 4.5 nm when
d
Ag is 8.5 × 10
-2 nm.</description><subject>Analysing. Testing. Standards</subject><subject>Applied sciences</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Measurement of properties and materials state</subject><subject>Metals, semimetals and alloys</subject><subject>Metals. Metallurgy</subject><subject>Nondestructive testing</subject><subject>Physics</subject><subject>Specific materials</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNp9kE2LFDEQhoMoOK7-Aw99ENFDa-Vjk_RFkEHdhQUvevESqtPVbCTTGVOZhfHX2-Ose_RUh3ret6hHiJcS3kmQ9j2Agd7CAG-8fzuAGYZePxIb6d3QK6flY7F5QJ6KZ8w_AUAqpTfix7YeuWHO6Te2VJauzB3uSt3flgN3uLS0K8uxy3ikyt26R-4n2hdOjabukFvFdpuWjg_jP2buOOU7qs_Fkxkz04v7eSG-f_70bXvV33z9cr39eNNHbU3rZy8hgpHOORhHAqX9OKFycrbOX7oIYyQ7aIlDHNVkLQ5IRmpnjZ5jjJf6Qrw-9-5r-XUgbmGXOFLOuND6RFDGG60MrKA5g7EW5kpz2Ne0w3oMEsJJZDhZCidLwfvwV2TQa-zVfT9yxDxXXGLih6yTGpRVK_bhjNH6612iGjgmWiJNqVJsYSrp_3f-ABETiGU</recordid><startdate>19881215</startdate><enddate>19881215</enddate><creator>Hashimoto, Mituru</creator><creator>Umezawa, Kiyoshi</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19881215</creationdate><title>Crystallization of amorphous antimony layers on as-deposited ultrathin sublayers of silver</title><author>Hashimoto, Mituru ; Umezawa, Kiyoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-f810c0417770bbe0238bda271f67857c0bce6931a9cb2d66a9ae4137643fccc53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Analysing. Testing. Standards</topic><topic>Applied sciences</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Measurement of properties and materials state</topic><topic>Metals, semimetals and alloys</topic><topic>Metals. Metallurgy</topic><topic>Nondestructive testing</topic><topic>Physics</topic><topic>Specific materials</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hashimoto, Mituru</creatorcontrib><creatorcontrib>Umezawa, Kiyoshi</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hashimoto, Mituru</au><au>Umezawa, Kiyoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crystallization of amorphous antimony layers on as-deposited ultrathin sublayers of silver</atitle><jtitle>Thin solid films</jtitle><date>1988-12-15</date><risdate>1988</risdate><volume>167</volume><issue>1</issue><spage>223</spage><epage>232</epage><pages>223-232</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>We have directly observed, by optical microscopy, the crystallization process of an amorphous antimony layer 3.4–8.9 nm thick prepared on an as-deposited layer of silver whose thickness ranges from 0.7 × 10
−2 to 8.5 × 10
−2 nm. A whole specimen is deposited onto a cover glass in a vacuum of 3 × 10
−4 Pa. The averaged growth rate
v of crystallites nucleated in the amorphous antimony layer is measured as a function of the reciprocal thickness
d
Sb
−1 of the antimony layer and also as a function of the substrate temperature
T
s at
d
Sb = 3.7 and 4.5 nm.
v decreases monotinically with increasing
d
Sb
-1 in accordance with a model previously presented (M. Hashimoto,
Thin Solid Films, 116 (1984) 373–381). When the thickness
d
Ag of the silver sublayer is equal to 8.5 × 10
−2 nm such parameters as the thicknesses
d
s0 and
d
v0 of surface regions near the substrate and the vacuum and the growth rates
u
s and
u
v at surfaces adjacent to the substrate and the vacuum are estimated to be 5.6 nm and 2.0 nm and 10 μm s
−1 and 0.21 μm s
−1.
Effective values of the activation energy for crystallization are estimated from the Arrhenius plot of
v from 30 to 60°C to be, for example, 0.8 eV at
d
Sb = 3.7 nm and 0.6 eV at
d
Sb = 4.5 nm when
d
Ag is 8.5 × 10
-2 nm.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/0040-6090(88)90499-3</doi><tpages>10</tpages></addata></record> |
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subjects | Analysing. Testing. Standards Applied sciences Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Measurement of properties and materials state Metals, semimetals and alloys Metals. Metallurgy Nondestructive testing Physics Specific materials Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
title | Crystallization of amorphous antimony layers on as-deposited ultrathin sublayers of silver |
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