Two-dimensional electron gas in an n+ GaAs/undoped AlGaAs/undoped GaAs SIS structure

The two-dimensionality of the electronic system in a new self-aligned GaAs MIS-like FET having an n + -GaAs/undoped AlGaAs/undoped GaAs SIS structure is demonstrated by the angular dependent characteristics of SdH effects. The mobility of two-dimensional electron gas in a GaAs-SISFET is shown to be...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1985-03, Vol.24 (3), p.213-216
Main Authors: WADA, T, MATSUMOTO, K, OGURA, M, SHIDA, K, YAO, T, IGARASHI, T, HASHIZUME, N, HAYASHI, Y
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The two-dimensionality of the electronic system in a new self-aligned GaAs MIS-like FET having an n + -GaAs/undoped AlGaAs/undoped GaAs SIS structure is demonstrated by the angular dependent characteristics of SdH effects. The mobility of two-dimensional electron gas in a GaAs-SISFET is shown to be 120000 cm 2 /V·s with a sheet carrier concentration of 6.6×10 11 cm -2 at 4.2 K and V G =0.6 V. The quantized Hall effect is realized by changing gate voltages at as low a magnetic field as 3.5 T.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.24.l213