Two-dimensional electron gas in an n+ GaAs/undoped AlGaAs/undoped GaAs SIS structure

The two-dimensionality of the electronic system in a new self-aligned GaAs MIS-like FET having an n + -GaAs/undoped AlGaAs/undoped GaAs SIS structure is demonstrated by the angular dependent characteristics of SdH effects. The mobility of two-dimensional electron gas in a GaAs-SISFET is shown to be...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1985-03, Vol.24 (3), p.213-216
Main Authors: WADA, T, MATSUMOTO, K, OGURA, M, SHIDA, K, YAO, T, IGARASHI, T, HASHIZUME, N, HAYASHI, Y
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c388t-cbdfc20e002e6aff6a11537e6ef381ec0fc34d850fa124dbe7edec144761024d3
cites cdi_FETCH-LOGICAL-c388t-cbdfc20e002e6aff6a11537e6ef381ec0fc34d850fa124dbe7edec144761024d3
container_end_page 216
container_issue 3
container_start_page 213
container_title Japanese Journal of Applied Physics
container_volume 24
creator WADA, T
MATSUMOTO, K
OGURA, M
SHIDA, K
YAO, T
IGARASHI, T
HASHIZUME, N
HAYASHI, Y
description The two-dimensionality of the electronic system in a new self-aligned GaAs MIS-like FET having an n + -GaAs/undoped AlGaAs/undoped GaAs SIS structure is demonstrated by the angular dependent characteristics of SdH effects. The mobility of two-dimensional electron gas in a GaAs-SISFET is shown to be 120000 cm 2 /V·s with a sheet carrier concentration of 6.6×10 11 cm -2 at 4.2 K and V G =0.6 V. The quantized Hall effect is realized by changing gate voltages at as low a magnetic field as 3.5 T.
doi_str_mv 10.1143/jjap.24.l213
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_24865959</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24865959</sourcerecordid><originalsourceid>FETCH-LOGICAL-c388t-cbdfc20e002e6aff6a11537e6ef381ec0fc34d850fa124dbe7edec144761024d3</originalsourceid><addsrcrecordid>eNpVkEtLAzEUhYMoWKs7f0AW4kanzWseXQ6itaWg0LoOaXIjU9LMmMwg_ntTWgRXl3P5zuFwELqlZEKp4NPdTnUTJiaOUX6GRpSLMhOkyM_RiBBGMzFj7BJdxbhLssgFHaHN5rvNTLMHH5vWK4fBge5D6_GnirjxWHnsH_Bc1XE6eNN2YHDt_smDwOvFGsc-DLofAlyjC6tchJvTHaOPl-fN02u2epsvnupVpnlV9ZneGqsZgVQGCmVtoSjNeQkFWF5R0MRqLkyVE6soE2YLJRjQVIiyoCQ9-BjdH3O70H4NEHu5b6IG55SHdoiSiarIZ_ksgY9HUIc2xgBWdqHZq_AjKZGH6eRyWb8nXq7SdAm_O-WqqJWzQXndxD9PaiRKxvkvABNuYA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24865959</pqid></control><display><type>article</type><title>Two-dimensional electron gas in an n+ GaAs/undoped AlGaAs/undoped GaAs SIS structure</title><source>Institute of Physics IOPscience extra</source><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>WADA, T ; MATSUMOTO, K ; OGURA, M ; SHIDA, K ; YAO, T ; IGARASHI, T ; HASHIZUME, N ; HAYASHI, Y</creator><creatorcontrib>WADA, T ; MATSUMOTO, K ; OGURA, M ; SHIDA, K ; YAO, T ; IGARASHI, T ; HASHIZUME, N ; HAYASHI, Y</creatorcontrib><description>The two-dimensionality of the electronic system in a new self-aligned GaAs MIS-like FET having an n + -GaAs/undoped AlGaAs/undoped GaAs SIS structure is demonstrated by the angular dependent characteristics of SdH effects. The mobility of two-dimensional electron gas in a GaAs-SISFET is shown to be 120000 cm 2 /V·s with a sheet carrier concentration of 6.6×10 11 cm -2 at 4.2 K and V G =0.6 V. The quantized Hall effect is realized by changing gate voltages at as low a magnetic field as 3.5 T.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.24.l213</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Japanese Journal of Applied Physics, 1985-03, Vol.24 (3), p.213-216</ispartof><rights>1986 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c388t-cbdfc20e002e6aff6a11537e6ef381ec0fc34d850fa124dbe7edec144761024d3</citedby><cites>FETCH-LOGICAL-c388t-cbdfc20e002e6aff6a11537e6ef381ec0fc34d850fa124dbe7edec144761024d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=8504723$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>WADA, T</creatorcontrib><creatorcontrib>MATSUMOTO, K</creatorcontrib><creatorcontrib>OGURA, M</creatorcontrib><creatorcontrib>SHIDA, K</creatorcontrib><creatorcontrib>YAO, T</creatorcontrib><creatorcontrib>IGARASHI, T</creatorcontrib><creatorcontrib>HASHIZUME, N</creatorcontrib><creatorcontrib>HAYASHI, Y</creatorcontrib><title>Two-dimensional electron gas in an n+ GaAs/undoped AlGaAs/undoped GaAs SIS structure</title><title>Japanese Journal of Applied Physics</title><description>The two-dimensionality of the electronic system in a new self-aligned GaAs MIS-like FET having an n + -GaAs/undoped AlGaAs/undoped GaAs SIS structure is demonstrated by the angular dependent characteristics of SdH effects. The mobility of two-dimensional electron gas in a GaAs-SISFET is shown to be 120000 cm 2 /V·s with a sheet carrier concentration of 6.6×10 11 cm -2 at 4.2 K and V G =0.6 V. The quantized Hall effect is realized by changing gate voltages at as low a magnetic field as 3.5 T.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNpVkEtLAzEUhYMoWKs7f0AW4kanzWseXQ6itaWg0LoOaXIjU9LMmMwg_ntTWgRXl3P5zuFwELqlZEKp4NPdTnUTJiaOUX6GRpSLMhOkyM_RiBBGMzFj7BJdxbhLssgFHaHN5rvNTLMHH5vWK4fBge5D6_GnirjxWHnsH_Bc1XE6eNN2YHDt_smDwOvFGsc-DLofAlyjC6tchJvTHaOPl-fN02u2epsvnupVpnlV9ZneGqsZgVQGCmVtoSjNeQkFWF5R0MRqLkyVE6soE2YLJRjQVIiyoCQ9-BjdH3O70H4NEHu5b6IG55SHdoiSiarIZ_ksgY9HUIc2xgBWdqHZq_AjKZGH6eRyWb8nXq7SdAm_O-WqqJWzQXndxD9PaiRKxvkvABNuYA</recordid><startdate>19850301</startdate><enddate>19850301</enddate><creator>WADA, T</creator><creator>MATSUMOTO, K</creator><creator>OGURA, M</creator><creator>SHIDA, K</creator><creator>YAO, T</creator><creator>IGARASHI, T</creator><creator>HASHIZUME, N</creator><creator>HAYASHI, Y</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19850301</creationdate><title>Two-dimensional electron gas in an n+ GaAs/undoped AlGaAs/undoped GaAs SIS structure</title><author>WADA, T ; MATSUMOTO, K ; OGURA, M ; SHIDA, K ; YAO, T ; IGARASHI, T ; HASHIZUME, N ; HAYASHI, Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c388t-cbdfc20e002e6aff6a11537e6ef381ec0fc34d850fa124dbe7edec144761024d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WADA, T</creatorcontrib><creatorcontrib>MATSUMOTO, K</creatorcontrib><creatorcontrib>OGURA, M</creatorcontrib><creatorcontrib>SHIDA, K</creatorcontrib><creatorcontrib>YAO, T</creatorcontrib><creatorcontrib>IGARASHI, T</creatorcontrib><creatorcontrib>HASHIZUME, N</creatorcontrib><creatorcontrib>HAYASHI, Y</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WADA, T</au><au>MATSUMOTO, K</au><au>OGURA, M</au><au>SHIDA, K</au><au>YAO, T</au><au>IGARASHI, T</au><au>HASHIZUME, N</au><au>HAYASHI, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-dimensional electron gas in an n+ GaAs/undoped AlGaAs/undoped GaAs SIS structure</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1985-03-01</date><risdate>1985</risdate><volume>24</volume><issue>3</issue><spage>213</spage><epage>216</epage><pages>213-216</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>The two-dimensionality of the electronic system in a new self-aligned GaAs MIS-like FET having an n + -GaAs/undoped AlGaAs/undoped GaAs SIS structure is demonstrated by the angular dependent characteristics of SdH effects. The mobility of two-dimensional electron gas in a GaAs-SISFET is shown to be 120000 cm 2 /V·s with a sheet carrier concentration of 6.6×10 11 cm -2 at 4.2 K and V G =0.6 V. The quantized Hall effect is realized by changing gate voltages at as low a magnetic field as 3.5 T.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.24.l213</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 1985-03, Vol.24 (3), p.213-216
issn 0021-4922
1347-4065
language eng
recordid cdi_proquest_miscellaneous_24865959
source Institute of Physics IOPscience extra; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Two-dimensional electron gas in an n+ GaAs/undoped AlGaAs/undoped GaAs SIS structure
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T10%3A08%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Two-dimensional%20electron%20gas%20in%20an%20n+%20GaAs/undoped%20AlGaAs/undoped%20GaAs%20SIS%20structure&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=WADA,%20T&rft.date=1985-03-01&rft.volume=24&rft.issue=3&rft.spage=213&rft.epage=216&rft.pages=213-216&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.24.l213&rft_dat=%3Cproquest_cross%3E24865959%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c388t-cbdfc20e002e6aff6a11537e6ef381ec0fc34d850fa124dbe7edec144761024d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=24865959&rft_id=info:pmid/&rfr_iscdi=true