Efficiency enhancement in quantum well lasers via tailored doping profiles

Reduced doping concentrations proximate to the active region in single quantum well (Al)GaAs lasers have been used to improve the external quantum efficiency. A substantial enhancement is observed in a structure in which, by design, the mode overlap with the doped confining regions is large. For a s...

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Bibliographic Details
Published in:Applied physics letters 1988-06, Vol.52 (24), p.2017-2018
Main Authors: WATERS, R. G, HILL, D. S, YELLEN, S. L
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:Reduced doping concentrations proximate to the active region in single quantum well (Al)GaAs lasers have been used to improve the external quantum efficiency. A substantial enhancement is observed in a structure in which, by design, the mode overlap with the doped confining regions is large. For a structure in which the mode is tightly confined, doping modifications have no measurable effect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99568