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First GaInAsP-InP double-heterostructure laser emitting at 1.27 microns on a silicon substrate

The first successful room-temperature GaInAsP-InP double-heterostructure laser emitting at 1.27 microns, grown by low-pressure metalorganic chemical vapor deposition on a Si substrate is reported. A pulsed threshold current density of 10 kA /sq cm at room temperature with an external quantum efficie...

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Bibliographic Details
Published in:Applied physics letters 1988-08, Vol.53, p.725-727
Main Authors: Razeghi, M, Defour, M, Omnes, F, Maurel, P H, Chazelas, J
Format: Article
Language:English
Online Access:Get full text
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Summary:The first successful room-temperature GaInAsP-InP double-heterostructure laser emitting at 1.27 microns, grown by low-pressure metalorganic chemical vapor deposition on a Si substrate is reported. A pulsed threshold current density of 10 kA /sq cm at room temperature with an external quantum efficiency of 10 percent per facet and an output power of 20 mW (for an oxide-defined stripe geometry with 12-micron stripe width and 250-micron cavity length) has been measured. The first aging test in pulse operation shows an increase of threshold current of only 7 percent for a cumulative time of 80 s at room temperature. (Author)
ISSN:0003-6951