GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating

The performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR) is reported for the first time. Stripes of Si(2+) with a period of 2300 A and a dose about 10 to the 14th/sq cm are directly implanted into the passive large optical cavity l...

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Bibliographic Details
Published in:Applied physics letters 1988-07, Vol.53 (4), p.265-267
Main Authors: Wu, M. C., Boenke, M. M., Wang, S., Clark, W. M., Jr, Stevens, E. H.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Lasers And Masers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:The performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR) is reported for the first time. Stripes of Si(2+) with a period of 2300 A and a dose about 10 to the 14th/sq cm are directly implanted into the passive large optical cavity layer to provide the distributed feedback. Surface-emitting light from the second-order grating is observed. Threshold current of 110 mA and single DBR mode operation from 20 to 40 C are obtained. The wavelength tuning rate with temperature is 0.8 A/C. The coupling coefficient is estimated to be 15/cm. The results show that FIB technology is practical for distributed feedback and DBR lasers and optoelectronic integrated circuits.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100142