Growth and characterization of epitaxial silicon on heteroepitaxial CaF2/Si(111) structures

We report the epitaxial growth of silicon on a CaF2/Si(111) heteroepitaxial structure. The results show that contrary to previous reports, the room-temperature predeposition of a very thin layer of silicon does not significantly affect the problem of calcium migration to the top surface of the silic...

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Bibliographic Details
Published in:Journal of applied physics 1988-12, Vol.64 (11), p.6296-6300
Main Authors: SINHAROY, S, GREGGI, J, SCHMIDT, D. N
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:We report the epitaxial growth of silicon on a CaF2/Si(111) heteroepitaxial structure. The results show that contrary to previous reports, the room-temperature predeposition of a very thin layer of silicon does not significantly affect the problem of calcium migration to the top surface of the silicon film, although it appears to improve the surface morphology of the film. Planar and cross-sectional transmission electron microscope and x-ray diffraction studies have shown that the silicon film, although single crystalline, is highly defective, the main defects being twins on both the inclined {1̄11} planes and the parallel (111) planes.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.342088