Growth kinetics of silicon carbide CVD

In CVD growth of silicon carbide on graphite substrates, the growth rate has been increased by the use of a thick intermediate layer. Before the CVD, the intermediate layer is simply deposited by the partial pressure control of the source gas in the same chamber. The intermediate layer of a few micr...

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Published in:Journal of crystal growth 1988-09, Vol.91 (4), p.599-604
Main Authors: Kaneko, Tsutomu, Okuno, Takashi, Yumoto, Hisami
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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description In CVD growth of silicon carbide on graphite substrates, the growth rate has been increased by the use of a thick intermediate layer. Before the CVD, the intermediate layer is simply deposited by the partial pressure control of the source gas in the same chamber. The intermediate layer of a few micrometers affects the CVD layer thickness of several tens of micrometers and makes the growth rate approximately double in the case of the source gases, dimethyl-dichloro-silane (DDS) and hydrogen. The temperature dependence of the growth rates indicates that the surface growth kinetics change.
doi_str_mv 10.1016/0022-0248(88)90127-3
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subjects Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
title Growth kinetics of silicon carbide CVD
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