High-purity epitaxial indium phosphide grown by the hydride technique

Indium phosphide layers with electron mobilities at liquid-nitrogen temperature of 91 000–125 000 cm2 /V s and carrier concentrations of 3–6×1014 cm−3 have been routinely grown by hydride vapor phase epitaxy. This 77 K mobility is significantly higher than the best previously reported for hydride va...

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Published in:Applied physics letters 1988-11, Vol.53 (19), p.1868-1870
Main Authors: MCCOLLUM, M. J, KIM, M. H, BOSE, S. S, LEE, B, STILLMAN, G. E
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
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cited_by cdi_FETCH-LOGICAL-c285t-361f989ed5d8fb0466c61854086bab43dae4fc2fc5d2bd7059c71cead29333d53
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container_title Applied physics letters
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creator MCCOLLUM, M. J
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description Indium phosphide layers with electron mobilities at liquid-nitrogen temperature of 91 000–125 000 cm2 /V s and carrier concentrations of 3–6×1014 cm−3 have been routinely grown by hydride vapor phase epitaxy. This 77 K mobility is significantly higher than the best previously reported for hydride vapor phase epitaxial InP. Analysis by variable temperature Hall effect, photothermal ionization spectroscopy, photoluminescence, and magnetophotoluminescence confirms the high purity of the samples. The influence of O2 on Si incorporation (injected over the In source) has also been studied. The injected oxygen did not significantly influence the silicon donor concentration.
doi_str_mv 10.1063/1.100483
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source AIP_美国物理联合会期刊回溯（NSTL购买）
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
title High-purity epitaxial indium phosphide grown by the hydride technique
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