Enhancement in optical transition in (111)-oriented GaAs-AlGaAs quantum well structures

The enhancement of the optical transition rate in (111)-oriented GaAs- AlGaAs quantum wells (QWs) compared with (100) QWs has been confirmed by photoluminescence. It is experimentally determined by absorption measurements of QWs that the anisotropy of the heavy-hole band in GaAs is extremely large....

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Bibliographic Details
Published in:Physical review letters 1988-01, Vol.60 (4), p.349-352
Main Authors: HAYAKAWA, T, TAKAHASHI, K, KONDO, M, SUYAMA, T, YAMAMOTO, S, HIJIKATA, T
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:The enhancement of the optical transition rate in (111)-oriented GaAs- AlGaAs quantum wells (QWs) compared with (100) QWs has been confirmed by photoluminescence. It is experimentally determined by absorption measurements of QWs that the anisotropy of the heavy-hole band in GaAs is extremely large. This large anisotropy in the host GaAs is considered to result in the higher optical transition rate in (111) QWs compared with (100) QWs. (Author)
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.60.349