Photochemical hole burning of tetraphenylporphine derivatives

The substituent effect on photochemical hole burning (PHB) for tetraphenylporphine was studied and the PHB efficiency was related to the electron donating and/or withdrawing properties of the substituents of the phenyl ring. The Hammett-sigma constants of the substituents were related to the efficie...

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Published in:Applied physics letters 1988-01, Vol.52 (1), p.16-17
Main Authors: KISHII, N, ASAI, N, KAWASUMI, K, TAMURA, S, SETO, J
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description The substituent effect on photochemical hole burning (PHB) for tetraphenylporphine was studied and the PHB efficiency was related to the electron donating and/or withdrawing properties of the substituents of the phenyl ring. The Hammett-sigma constants of the substituents were related to the efficiency of the photochemical hole burning reaction. Compounds with a low Hammett-sigma constant such as tetra-(4-methoxyphenyl)porphine had a higher PHB reaction efficiency than derivatives with a higher value such as tetraphenylporphine. We have also demonstrated multiple photochemical hole burning using this high efficiency compound tetra-(4-methoxyphenyl)porphine as a guest material.
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Electronics
Exact sciences and technology
Storage and reproduction of information
title Photochemical hole burning of tetraphenylporphine derivatives
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