High-power, very low threshold, GaInP/AlGaInP visible diode lasers

Visible light (665 nm) laser diodes employing a strained-layer, single quantum well, graded index separate confinement heterostructure were fabricated from epitaxial wafers grown by metalorganic chemical vapor deposition. Threshold current densities for single element, uncoated, broad-area diodes op...

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Published in:Applied physics letters 1991-06, Vol.58 (22), p.2464-2466
Main Authors: SERREZE, H. B, CHEN, Y. C, WATERS, R. G
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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description Visible light (665 nm) laser diodes employing a strained-layer, single quantum well, graded index separate confinement heterostructure were fabricated from epitaxial wafers grown by metalorganic chemical vapor deposition. Threshold current densities for single element, uncoated, broad-area diodes operated cw as low as 425 A/cm2, cw power outputs of 340 mW per facet, and pulsed outputs (100 μs pulse width) of slightly under 1 W per facet were achieved. These power output values are believed to be the highest reported to date for visible light diode lasers, and this cw threshold current density is believed to be, by far, the lowest.
doi_str_mv 10.1063/1.104845
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subjects Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
title High-power, very low threshold, GaInP/AlGaInP visible diode lasers
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