Preparation and properties of resistive films

The results os of a systematic study of the resistivity of some metal-silicon (with metals such as cobalt, chromium, molybdenum, nickel, titanium and tungsten and metal-insulator (with metals such as aluminum, chromium, nickel and titanium) films are reported as a function of the fraction of metal i...

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Bibliographic Details
Published in:Thin solid films 1988-02, Vol.157 (1), p.21-28
Main Authors: Shih, K.K., Aviram, A., Guarnieri, C.R.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:The results os of a systematic study of the resistivity of some metal-silicon (with metals such as cobalt, chromium, molybdenum, nickel, titanium and tungsten and metal-insulator (with metals such as aluminum, chromium, nickel and titanium) films are reported as a function of the fraction of metal in the film composition. All the materials were made by the electron beam evaporation process, using either dual-electron-beam or reactive evaporation (for AlAl 2O 3 and SnSnO 2 films). A variation of almost three orders of magnitude in resistivity was obtained by changing the composition of some of these films. The SnSnO 2 films, made by reactive evaporation, have an advantage in fabrication in not having a strong dependence of resistivity on composition, thereby relaxing the requirements on the control of oxygen pressure during deposition. Therefore, it is the preferred choice for resistive ribbon application.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(88)90341-0