Parameters for In Situ Growth of High T sub c Superconducting Thin Films Using an Oxygen Plasma Source

Superconducting thin films of Dy--Ba--Cu--O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the O incorporation. This allows growth on a relatively low-temperature substrate kept < 600 deg C fol...

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Bibliographic Details
Published in:Applied physics letters 1988-08, Vol.53 (5), p.441-443
Main Authors: Spah, R J, Hess, H F, Stormer, H L, White, A E, Short, K T
Format: Article
Language:English
Online Access:Get full text
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Summary:Superconducting thin films of Dy--Ba--Cu--O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the O incorporation. This allows growth on a relatively low-temperature substrate kept < 600 deg C followed by an in situ anneal < 400 deg C. Thin films of Dy--Ba--Cu--O, which were fully superconducting at 40K, have been fabricated by this in situ growth process. 9 ref.--AA
ISSN:0003-6951