Parameters for In Situ Growth of High T sub c Superconducting Thin Films Using an Oxygen Plasma Source

Superconducting thin films of Dy--Ba--Cu--O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the O incorporation. This allows growth on a relatively low-temperature substrate kept < 600 deg C fol...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1988-08, Vol.53 (5), p.441-443
Main Authors: Spah, R J, Hess, H F, Stormer, H L, White, A E, Short, K T
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 443
container_issue 5
container_start_page 441
container_title Applied physics letters
container_volume 53
creator Spah, R J
Hess, H F
Stormer, H L
White, A E
Short, K T
description Superconducting thin films of Dy--Ba--Cu--O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the O incorporation. This allows growth on a relatively low-temperature substrate kept < 600 deg C followed by an in situ anneal < 400 deg C. Thin films of Dy--Ba--Cu--O, which were fully superconducting at 40K, have been fabricated by this in situ growth process. 9 ref.--AA
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_24971971</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24971971</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_249719713</originalsourceid><addsrcrecordid>eNqNissKwjAQRbNQsD7-YVbuhGp80LVYdaXQupYYJ20kTWomQf17FfwA4cLhHG6HJWma8skyW0x7rE90--hixnnC1FF40WBAT6Cch72FQocIW-8eoQanYKerGkqgeAEJRWzRS2evUQZtKyhrbSHXpiE40TcIC4fnq0ILRyOoEVC46CUOWVcJQzj6ccDG-aZc7yatd_eIFM6NJonGCIsu0nk2z1bTz_jfxzdFwkh7</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24971971</pqid></control><display><type>article</type><title>Parameters for In Situ Growth of High T sub c Superconducting Thin Films Using an Oxygen Plasma Source</title><source>AIP Digital Archive</source><creator>Spah, R J ; Hess, H F ; Stormer, H L ; White, A E ; Short, K T</creator><creatorcontrib>Spah, R J ; Hess, H F ; Stormer, H L ; White, A E ; Short, K T</creatorcontrib><description>Superconducting thin films of Dy--Ba--Cu--O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the O incorporation. This allows growth on a relatively low-temperature substrate kept &lt; 600 deg C followed by an in situ anneal &lt; 400 deg C. Thin films of Dy--Ba--Cu--O, which were fully superconducting at 40K, have been fabricated by this in situ growth process. 9 ref.--AA</description><identifier>ISSN: 0003-6951</identifier><language>eng</language><ispartof>Applied physics letters, 1988-08, Vol.53 (5), p.441-443</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Spah, R J</creatorcontrib><creatorcontrib>Hess, H F</creatorcontrib><creatorcontrib>Stormer, H L</creatorcontrib><creatorcontrib>White, A E</creatorcontrib><creatorcontrib>Short, K T</creatorcontrib><title>Parameters for In Situ Growth of High T sub c Superconducting Thin Films Using an Oxygen Plasma Source</title><title>Applied physics letters</title><description>Superconducting thin films of Dy--Ba--Cu--O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the O incorporation. This allows growth on a relatively low-temperature substrate kept &lt; 600 deg C followed by an in situ anneal &lt; 400 deg C. Thin films of Dy--Ba--Cu--O, which were fully superconducting at 40K, have been fabricated by this in situ growth process. 9 ref.--AA</description><issn>0003-6951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNqNissKwjAQRbNQsD7-YVbuhGp80LVYdaXQupYYJ20kTWomQf17FfwA4cLhHG6HJWma8skyW0x7rE90--hixnnC1FF40WBAT6Cch72FQocIW-8eoQanYKerGkqgeAEJRWzRS2evUQZtKyhrbSHXpiE40TcIC4fnq0ILRyOoEVC46CUOWVcJQzj6ccDG-aZc7yatd_eIFM6NJonGCIsu0nk2z1bTz_jfxzdFwkh7</recordid><startdate>19880801</startdate><enddate>19880801</enddate><creator>Spah, R J</creator><creator>Hess, H F</creator><creator>Stormer, H L</creator><creator>White, A E</creator><creator>Short, K T</creator><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19880801</creationdate><title>Parameters for In Situ Growth of High T sub c Superconducting Thin Films Using an Oxygen Plasma Source</title><author>Spah, R J ; Hess, H F ; Stormer, H L ; White, A E ; Short, K T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_249719713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Spah, R J</creatorcontrib><creatorcontrib>Hess, H F</creatorcontrib><creatorcontrib>Stormer, H L</creatorcontrib><creatorcontrib>White, A E</creatorcontrib><creatorcontrib>Short, K T</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Spah, R J</au><au>Hess, H F</au><au>Stormer, H L</au><au>White, A E</au><au>Short, K T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Parameters for In Situ Growth of High T sub c Superconducting Thin Films Using an Oxygen Plasma Source</atitle><jtitle>Applied physics letters</jtitle><date>1988-08-01</date><risdate>1988</risdate><volume>53</volume><issue>5</issue><spage>441</spage><epage>443</epage><pages>441-443</pages><issn>0003-6951</issn><abstract>Superconducting thin films of Dy--Ba--Cu--O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the O incorporation. This allows growth on a relatively low-temperature substrate kept &lt; 600 deg C followed by an in situ anneal &lt; 400 deg C. Thin films of Dy--Ba--Cu--O, which were fully superconducting at 40K, have been fabricated by this in situ growth process. 9 ref.--AA</abstract></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 1988-08, Vol.53 (5), p.441-443
issn 0003-6951
language eng
recordid cdi_proquest_miscellaneous_24971971
source AIP Digital Archive
title Parameters for In Situ Growth of High T sub c Superconducting Thin Films Using an Oxygen Plasma Source
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T14%3A48%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Parameters%20for%20In%20Situ%20Growth%20of%20High%20T%20sub%20c%20Superconducting%20Thin%20Films%20Using%20an%20Oxygen%20Plasma%20Source&rft.jtitle=Applied%20physics%20letters&rft.au=Spah,%20R%20J&rft.date=1988-08-01&rft.volume=53&rft.issue=5&rft.spage=441&rft.epage=443&rft.pages=441-443&rft.issn=0003-6951&rft_id=info:doi/&rft_dat=%3Cproquest%3E24971971%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_miscellaneous_249719713%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=24971971&rft_id=info:pmid/&rfr_iscdi=true