Operating characteristics of single-quantum-well AlGaAs/GaAs high-power lasers

The operating characteristics of six types of graded-index separate confinement heterostructure single-quantum-well wide-stripe lasers grown by metalorganic chemical vapor deposition are reported. The lasers exhibited intrinsic mode losses as low as 3 cm/sup -1/ and internal quantum efficiencies nea...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1988-07, Vol.24 (7), p.1258-1265
Main Authors: Wagner, D.K., Waters, R.G., Tihanyi, P.L., Hill, D.S., Roza, A.J., Vollmer, H.J., Leopold, M.M.
Format: Article
Language:English
Subjects:
Chemical lasers
Chemical vapor deposition
Current density
Current measurement
Density measurement
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gain measurement
Gallium arsenide
Laser modes
Lasers
Measurement units
Optical devices
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:The operating characteristics of six types of graded-index separate confinement heterostructure single-quantum-well wide-stripe lasers grown by metalorganic chemical vapor deposition are reported. The lasers exhibited intrinsic mode losses as low as 3 cm/sup -1/ and internal quantum efficiencies near unity. Measured differential gain coefficients range from 3.7 to 6.5 cm/A, and extrapolated transparency current densities range from 54 to 145 A/cm/sup 2/. These wide-stripe lasers are typically multilongitudinal mode and exhibit narrowing of the gain envelope and lateral far-field pattern as the cavity length increases. The high value of T/sub 0/(>200 K) at long cavity lengths in conjunction with the low current density permits junction-side-up operation to CW optical powers of 0.5-0.7 W/facet, at which level catastrophic facet damage occurs on the uncoated devices. A maximum power conversion efficiency of 57% was measured on the laser structure exhibiting the lowest threshold current.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.962