Semiempirical model for electroabsorption in GaAs/AlGaAs multiple quantum-well modulator structures

A semi-empirical model for electroabsorption in GaAs/AlGaAs quantum wells is proposed which is simple and has sufficient accuracy to make it suitable as a fast design-tool for multiple quantum well (MQW) optical modulators. The model is based on a higher order perturbation approach which includes al...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1990-02, Vol.26 (2), p.296-304
Main Authors: Lengyel, G, Jelley, Kevin W, Engelmann, Reinhart W H
Format: Article
Language:English
Online Access:Get full text
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Summary:A semi-empirical model for electroabsorption in GaAs/AlGaAs quantum wells is proposed which is simple and has sufficient accuracy to make it suitable as a fast design-tool for multiple quantum well (MQW) optical modulators. The model is based on a higher order perturbation approach which includes all bound solutions of the unperturbed Hamiltonian. To complete the model, semi-empirical relationship are set up for both the zero-field absorption peak and the half-width at half-maximum (HWHM) values of the heavy-hole (hh) exciton. Comparison with extensive experimental data show a remarkable agreement for a range of wells between 5 and 20 nm.
ISSN:0018-9197
DOI:10.1109/3.44961