Simulation of proton-induced energy deposition in integrated circuits

A time-efficient simulation technique was developed for modeling the energy deposition by incident protons in modern integrated circuits. To avoid the excessive computer time required by many proton-effects simulators, a stochastic method was chosen to model the various physical effects responsible...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1988-02, Vol.35 (1), p.981-986
Main Authors: Fernald, K.W., Kerns, S.E.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit simulation
Computational modeling
Computer simulation
Design. Technologies. Operation analysis. Testing
Electronics
Electronics And Electrical Engineering
Exact sciences and technology
Integrated circuit modeling
Integrated circuits
Performance analysis
Physics computing
Probability density function
Protons
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stochastic processes
Transient analysis
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Summary:A time-efficient simulation technique was developed for modeling the energy deposition by incident protons in modern integrated circuits. To avoid the excessive computer time required by many proton-effects simulators, a stochastic method was chosen to model the various physical effects responsible for energy deposition by incident protons. Using probability density functions to describe the nuclear reactions responsible for most proton-induced memory upsets, the simulator determines the probability of a proton hit depositing the energy necessary for circuit destabilization. This factor is combined with various circuit parameters to determine the expected error-rate in a given proton environment. An analysis of transient or dose-rate effects is also performed. A comparison to experimental energy-disposition data proves the simulator to be quite accurate for predicting the expected number of events in certain integrated circuits.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.12869