Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy

Selective area growth of InP/InGaAs multiple quantum well laser structures has been demonstrated in openings defined in Si3 N4 layers on InP substrates. Growth was achieved, by metalorganic molecular beam epitaxy, in openings as small as 3 μm wide, but no growth occurred on the dielectric coating. C...

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Bibliographic Details
Published in:Applied physics letters 1988-07, Vol.53 (2), p.97-98
Main Authors: ANDREWS, D. A, REJMAN-GREENE, M. A. Z, WAKEFIELD, B, DAVIES, G. J
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:Selective area growth of InP/InGaAs multiple quantum well laser structures has been demonstrated in openings defined in Si3 N4 layers on InP substrates. Growth was achieved, by metalorganic molecular beam epitaxy, in openings as small as 3 μm wide, but no growth occurred on the dielectric coating. Cathodoluminescence from individual laser stripes was observed at 300 K with a wavelength determined to be 1.57 μm and at 100 K with a wavelength of 1.46 μm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100360