Slope resistance characteristics of GaAs-(Al,Ga)As-GaAs single barrier structures

Measurements of the incremental slope resistance of a GaAs-(Al,Ga)As-GaAs single barrier structure have been made at temperatures between 70 and 230 K. In contrast with other work we deliberately concentrate on the region close to zero applied bias. The deficiencies in the often-used Wentzel–Kramers...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1988-01, Vol.52 (4), p.305-307
Main Authors: LACKLISON, D. E, DUGGAN, G, HARRIS, J. J, FOXON, C. T. B, HILTON, D, ROBERTS, C, HELLON, C. M
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Measurements of the incremental slope resistance of a GaAs-(Al,Ga)As-GaAs single barrier structure have been made at temperatures between 70 and 230 K. In contrast with other work we deliberately concentrate on the region close to zero applied bias. The deficiencies in the often-used Wentzel–Kramers–Brillouin analysis of the electrical characteristics are exposed in this regime, and an exact, Airy function approach is found to be essential to describe our observations.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99501