Spatial localization of impurities in δ-doped GaAs

Capacitance-voltage profiles on δ-doped GaAs grown by molecular beam epitaxy reveal extremely narrow widths of ≲40 Å at room temperature. Subband structure and capacitance-voltage (C-V) profiles of δ-doped GaAs are calculated self-consistently. Experimental C-V profiles agree with self-consistent re...

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Bibliographic Details
Published in:Applied physics letters 1988-05, Vol.52 (18), p.1508-1510
Main Authors: SCHUBERT, E. F, STARK, J. B, ULLRICH, B, CUNNINGHAM, J. E
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Capacitance-voltage profiles on δ-doped GaAs grown by molecular beam epitaxy reveal extremely narrow widths of ≲40 Å at room temperature. Subband structure and capacitance-voltage (C-V) profiles of δ-doped GaAs are calculated self-consistently. Experimental C-V profiles agree with self-consistent results, only if we assume that Si impurities are localized on the length scale of the lattice constant in the host GaAs zinc-blende lattice.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99114