Thermally stable contacts to n-type GaAs. VIII. Sputter-deposited InAs contacts

The electrical properties and microstructure of InAs ohmic contacts to n-type GaAs, prepared by sputter-depositing a single target, were studied by measuring the contact resistance (R sub(c)) by the transmission line method and analyzing the interfacial structure by x-ray diffraction and cross-secti...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1990-01, Vol.68 (5), p.2475-2481
Main Authors: Kim, H-J, Murakami, M, Wright, S L, Norcott, M, Price, W H, La Tulipe, D
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The electrical properties and microstructure of InAs ohmic contacts to n-type GaAs, prepared by sputter-depositing a single target, were studied by measuring the contact resistance (R sub(c)) by the transmission line method and analyzing the interfacial structure by x-ray diffraction and cross-sectional transmission electron microscopy. Current-voltage measurement of an as-deposited InAs/W contact showed Schottky behavior.
ISSN:0021-8979