Two-dimensional analytic modeling of very thin SOI MOSFETs

An analytic solution of the Poisson's equation for MOSFETs on very thin SOI (silicon on insulator) was developed using an infinite series method. The calculation region includes the thin SOI and the gate and buried oxides. The results of this model were found to agree well with a two-dimensiona...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1990-09, Vol.37 (9), p.1999-2006
Main Authors: Woo, J.C.S., Terrill, K.W., Vasudev, P.K.
Format: Article
Language:English
Subjects:
Applied sciences
Circuits
Delay
Doping
Electronics
Exact sciences and technology
MOSFETs
Parasitic capacitance
Poisson equations
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
Silicon on insulator technology
Substrates
Transistors
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Summary:An analytic solution of the Poisson's equation for MOSFETs on very thin SOI (silicon on insulator) was developed using an infinite series method. The calculation region includes the thin SOI and the gate and buried oxides. The results of this model were found to agree well with a two-dimensional (PISCES) simulation in the subthreshold region and the linear region with small V/sub DS/. This model is used to study the short-channel behavior of very small MOS transistors on thin SOI. It is found that with very thin SOI, short-channel effects are much reduced compared to bulk MOS transistors and depend on the bulk-substrate bias. The model also shows that it is possible to fabricate submicrometer transistors on very thin SOI even if the channel doping is nearly intrinsic.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.57162