Band offset determination from conduction band filling in InGaAs/GaAs quantum wells

Conduction band filling experiments are performed on InGaAs/GaAs quantum well samples under intense optical excitation. The Quasi-Fermi level pinning at the quantum well edge and the well luminescence saturation is used to measure the electron ground state energy relative to the quantum well edge. T...

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Bibliographic Details
Published in:Solid state communications 1991, Vol.79 (11), p.889-892
Main Authors: Marcinkevičius, S., Ambrazevičius, G., Lideikis, T., Naudžius, K.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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Summary:Conduction band filling experiments are performed on InGaAs/GaAs quantum well samples under intense optical excitation. The Quasi-Fermi level pinning at the quantum well edge and the well luminescence saturation is used to measure the electron ground state energy relative to the quantum well edge. The conduction band offset calculated using this energy value is found to be independent of the In fraction and equal to 0.6.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(91)90437-Z