Cadmium telluride films by metalorganic chemical vapor deposition

Polycrystalline films of cadmium telluride (CdTe) have been deposited on glass and SnO2:F/glass substrates at 350-400 C by the reaction of dimethylcadmium (DMCd) and diisopropyltellurium (DIPTe) in a hydrogen atmosphere. The DMCd/DIPTe molar ratio in the reaction mixture is an important factor affec...

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Bibliographic Details
Published in:Journal of applied physics 1991-06, Vol.69 (11), p.7651-7655
Main Authors: CHU, T. L, CHU, S. S, FEREKIDES, C, BRITT, J, WU, C. Q
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity of specific materials
Electronic transport in condensed matter
Exact sciences and technology
Physics
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Summary:Polycrystalline films of cadmium telluride (CdTe) have been deposited on glass and SnO2:F/glass substrates at 350-400 C by the reaction of dimethylcadmium (DMCd) and diisopropyltellurium (DIPTe) in a hydrogen atmosphere. The DMCd/DIPTe molar ratio in the reaction mixture is an important factor affecting the deposition rate, conductivity type, and photoluminescence of deposited films. Photoluminescence measurements indicate that CdTe films deposited at 400 C are of better quality than films deposited at 350 C. The films deposited at 400 C are p-type at DMCd/DIPTe molar ratios of 0.51 or less and are n-type at higher ratios. The structural, optical, and electrical properties of CdTe films have been characterized. (Author)
ISSN:0021-8979
1089-7550
DOI:10.1063/1.347536