Barrier width dependence of leakage currents in InGaAs/GaAs multiple quantum well P-I-N diodes

A range of InGaAs/GaAs strained layer multiple quantum well pin diode structures with different barrier dimensions has been grown and characterized. High quality low leakage structures ( < 2 x 10 super(-4) A/cm super(2) at 0.9 V sub(BD)) with a high degree of strain ( similar to 2%) have been pro...

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Bibliographic Details
Published in:Journal of electronic materials 1991-04, Vol.20 (4), p.295-297
Main Authors: DAVID, J. P. R, GREY, R, PATE, M. A, CLAXTON, P. A, WOODHEAD, J
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A range of InGaAs/GaAs strained layer multiple quantum well pin diode structures with different barrier dimensions has been grown and characterized. High quality low leakage structures ( < 2 x 10 super(-4) A/cm super(2) at 0.9 V sub(BD)) with a high degree of strain ( similar to 2%) have been produced. An important factor affecting the leakage for a fixed well composition and dimension is found to be the barrier width.
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02657893