Characteristics of Y-Ba-Cu-O superconductor films on GaAs with an Al2O3 or AlGaO3 buffer layer

By depositing a buffer layer of Al2O3 on GaAs, we have been able to laser ablate a superconducting film of Y1Ba2Cu3O7−x overtop. The onset of superconductivity is 92 K and zero resistance is observed at 80 K in a structure with a suitably annealed Al2O3 film which is converted to AlGaO3. Both the Al...

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Bibliographic Details
Published in:Applied physics letters 1991-06, Vol.58 (23), p.2704-2706
Main Authors: SHEWCHUN, J, YI CHEN, HOLDER, J. S, UHER, C
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Physics
Superconducting films and low-dimensional structures
Superconductivity
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Summary:By depositing a buffer layer of Al2O3 on GaAs, we have been able to laser ablate a superconducting film of Y1Ba2Cu3O7−x overtop. The onset of superconductivity is 92 K and zero resistance is observed at 80 K in a structure with a suitably annealed Al2O3 film which is converted to AlGaO3. Both the Al2O3-GaAs and the Al2O3-Y1Ba2Cu3O7−x interfaces are remarkably well preserved with virtually no interdiffusion or interaction. The Al2O3 or homolog AlGaO3 film also prevents decomposition of the GaAs at the deposition temperature of 730 °C.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104789