Characterization of silicon on insulator substrates using reflection mode double-crystal X-ray topography

• Published in: Thin solid films 1991-12, Vol.206 (1), p.27-33
• Main Authors: Ma, David I., Campisi, George J., Qadri, Syed B., Peckerar, Martin C.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physical properties of thin films, nonelectronic; Physics; Solid surfaces and solid-solid interfaces; Surface energy; thermodynamic properties; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(91)90388-E

The strain distributions of various silicon-on-insulator (SOI) wafers were studied using Bragg reflection mode double-crystal topography analysis. These SOI samples included the separation by implanted oxygen (SIMOX), the zone melt recrystallization (ZMR), and the bond and etch-back silicon-on-insulator (BESOI). The inherent warpage of each SOI sample was revealed by X-ray double-crystal topography (DCT). Dislocation loops and surface-terminating defects were also observed on the ZMR sample. The defect density was evaluated by double-crystal rocking curve (DCRC) analysis using a symmetric (004) set-up. The relative peak intensities and full width at half maxima (FWHM) were measured. The quality of superficial silicon layers of most SOI wafers was similar to the quality of a single-crystal silicon, except the ZMR sample. According to these analyses, SIMOX wafers provide the best single-crystal quality and consistent lattice characteristics under various fabrication processes.