Bridge type Josephson junctions in MO-CVD thin films

Using Y 1 Ba 2 Cu 3 O 7- x thin films, bridge type Josephson junctions are fabricated. Thin films of Y 1 Ba 2 Cu 3 O 7- x on (100) MgO substrates are deposited by the MO-CVD method. These films exhibit zero resistance at 86 K, and a critical current density of 10 4 to 10 5 A/cm 2 at 77 K. The effect...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1989-09, Vol.28 (9), p.L1581-L1584
Main Authors: NOGE, S, YAMASHITA, T, ZHEN WANG, MATSUI, T, KUROSAWA, H, YAMANE, H, HIRAI, T
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Physics
Proximity effects, weak links, tunneling phenomena, and josephson effects, adreev effect, sn and sns junctions
Superconductivity
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Summary:Using Y 1 Ba 2 Cu 3 O 7- x thin films, bridge type Josephson junctions are fabricated. Thin films of Y 1 Ba 2 Cu 3 O 7- x on (100) MgO substrates are deposited by the MO-CVD method. These films exhibit zero resistance at 86 K, and a critical current density of 10 4 to 10 5 A/cm 2 at 77 K. The effect of radio frequency irradiations to the bridge are investigated. Sharp microwave-induced steps are observed up to 800 µV at 77 K for X band irradiation. Clear Shapiro steps are also observed at the millimeter (101 GHz) and submillimeter frequency (303 GHz). The results demonstrate that the thin film bridges made by MO-CVD show an ideal ac Josephson effect.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.28.l1581