A comparison of base current reversal and bipolar snapback in advanced n-p-n bipolar transistors

• Published in: IEEE electron device letters 1991-08, Vol.12 (8), p.407-409
• Main Authors: Hayden, J.D., Burnett, D., Nangle, J.
• Format: Article
• Language: English
• Subjects: Applied sciences; Bipolar transistors; Current measurement; Doping; Electronics; Exact sciences and technology; Impact ionization; Monitoring; Random access memory; Read-write memory; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon carbide; Testing; Transistors; Voltage
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.119147

It is argued that base current reversal in an advanced n-p-n bipolar transistor arises from the same physical mechanism as classical bipolar snapback. Measurements of the bipolar snapback voltage, BV/sub CE0/, and of the collector-emitter voltage required for base current reversal, V/sub CE/Br/ are identical over a range of variation in transistor design and over more than eight orders of magnitude in collector current. The minimum or sustaining values of BV/sub CE0/, or V/sub CE/Br/, should be used for the purposes of bipolar device design rather than the larger trigger value measured at very low current levels. The former is an indication of electric field strength in the collector-base depletion region while the latter is a monitor of the level of the nonideal base current component. Measurement of base current reversal provides a more consistent and less destructive technique of characterizing bipolar sustaining voltage.< >