Charge collection and SEU sensitivity for Ga/As bipolar devices

Charge collection was measured across the base-emitter heterojunction to test certain assumptions of the standard sensitive-volume models for calculating SEU (single-event-upset) rates. The observed dependence of charge collection on the LET (linear energy transfer) and the angle of incidence of 4.4...

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Bibliographic Details
Published in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) 1989-12, Vol.36 (6), p.2300-2304
Main Authors: Yaktieen, M.H., McNulty, P.J., Lynch, J.E., Roth, D.R., Salzman, J.F., Yuan, J.H.
Format: Article
Language:English
Subjects:
360605 - Materials- Radiation Effects
440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems
ALPHA SOURCES
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
CHARGE COLLECTION
Charge measurement
CHARGED PARTICLES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
Current measurement
DEPOSITION
Energy exchange
ENERGY TRANSFER
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
HETEROJUNCTIONS
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ION SOURCES
IONS
JUNCTIONS
LET
MATERIALS SCIENCE
Measurement standards
MOCVD
Molecular beam epitaxial growth
MOLECULAR BEAM EPITAXY
OXYGEN IONS
PARTICLE SOURCES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
RADIATION SOURCES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
Switches
Testing
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Description
Summary:Charge collection was measured across the base-emitter heterojunction to test certain assumptions of the standard sensitive-volume models for calculating SEU (single-event-upset) rates. The observed dependence of charge collection on the LET (linear energy transfer) and the angle of incidence of 4.4-MeV on oxygen ions is consistent with the hypothesis that the charge collected equals the product of LET and path length through a sensitive volume of fixed dimensions. The data suggest that the switch from MBE (molecular beam epitaxy) to MOCVD (metal-organic chemical vapor deposition) processing resulted in an increase in the thickness of the sensitive volume from 0.11 to 0.25 mu m.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.45439