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Charge collection and SEU sensitivity for Ga/As bipolar devices
Charge collection was measured across the base-emitter heterojunction to test certain assumptions of the standard sensitive-volume models for calculating SEU (single-event-upset) rates. The observed dependence of charge collection on the LET (linear energy transfer) and the angle of incidence of 4.4...
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| Published in: | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) 1989-12, Vol.36 (6), p.2300-2304 |
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| Main Authors: | , , , , , |
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| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c332t-a1b81aa33d3714663055212f7f4cdc308058ae17642d8c65a5690b344f1e374e3 |
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| cites | cdi_FETCH-LOGICAL-c332t-a1b81aa33d3714663055212f7f4cdc308058ae17642d8c65a5690b344f1e374e3 |
| container_end_page | 2304 |
| container_issue | 6 |
| container_start_page | 2300 |
| container_title | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) |
| container_volume | 36 |
| creator | Yaktieen, M.H. McNulty, P.J. Lynch, J.E. Roth, D.R. Salzman, J.F. Yuan, J.H. |
| description | Charge collection was measured across the base-emitter heterojunction to test certain assumptions of the standard sensitive-volume models for calculating SEU (single-event-upset) rates. The observed dependence of charge collection on the LET (linear energy transfer) and the angle of incidence of 4.4-MeV on oxygen ions is consistent with the hypothesis that the charge collected equals the product of LET and path length through a sensitive volume of fixed dimensions. The data suggest that the switch from MBE (molecular beam epitaxy) to MOCVD (metal-organic chemical vapor deposition) processing resulted in an increase in the thickness of the sensitive volume from 0.11 to 0.25 mu m.< > |
| doi_str_mv | 10.1109/23.45439 |
| format | article |
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The observed dependence of charge collection on the LET (linear energy transfer) and the angle of incidence of 4.4-MeV on oxygen ions is consistent with the hypothesis that the charge collected equals the product of LET and path length through a sensitive volume of fixed dimensions. The data suggest that the switch from MBE (molecular beam epitaxy) to MOCVD (metal-organic chemical vapor deposition) processing resulted in an increase in the thickness of the sensitive volume from 0.11 to 0.25 mu m.< ></description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.45439</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>360605 - Materials- Radiation Effects ; 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems ; ALPHA SOURCES ; ARSENIC COMPOUNDS ; ARSENIDES ; CALCULATION METHODS ; CHARGE COLLECTION ; Charge measurement ; CHARGED PARTICLES ; CHEMICAL COATING ; CHEMICAL VAPOR DEPOSITION ; Current measurement ; DEPOSITION ; Energy exchange ; ENERGY TRANSFER ; EPITAXY ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; HARDENING ; HETEROJUNCTIONS ; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ; ION SOURCES ; IONS ; JUNCTIONS ; LET ; MATERIALS SCIENCE ; Measurement standards ; MOCVD ; Molecular beam epitaxial growth ; MOLECULAR BEAM EPITAXY ; OXYGEN IONS ; PARTICLE SOURCES ; PHYSICAL RADIATION EFFECTS ; PNICTIDES ; RADIATION EFFECTS ; RADIATION HARDENING ; RADIATION SOURCES ; SEMICONDUCTOR JUNCTIONS ; SURFACE COATING ; Switches ; Testing</subject><ispartof>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), 1989-12, Vol.36 (6), p.2300-2304</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c332t-a1b81aa33d3714663055212f7f4cdc308058ae17642d8c65a5690b344f1e374e3</citedby><cites>FETCH-LOGICAL-c332t-a1b81aa33d3714663055212f7f4cdc308058ae17642d8c65a5690b344f1e374e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/45439$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,309,310,314,780,784,789,790,885,23930,23931,25140,27924,27925,54796</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/7167333$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Yaktieen, M.H.</creatorcontrib><creatorcontrib>McNulty, P.J.</creatorcontrib><creatorcontrib>Lynch, J.E.</creatorcontrib><creatorcontrib>Roth, D.R.</creatorcontrib><creatorcontrib>Salzman, J.F.</creatorcontrib><creatorcontrib>Yuan, J.H.</creatorcontrib><title>Charge collection and SEU sensitivity for Ga/As bipolar devices</title><title>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)</title><addtitle>TNS</addtitle><description>Charge collection was measured across the base-emitter heterojunction to test certain assumptions of the standard sensitive-volume models for calculating SEU (single-event-upset) rates. The observed dependence of charge collection on the LET (linear energy transfer) and the angle of incidence of 4.4-MeV on oxygen ions is consistent with the hypothesis that the charge collected equals the product of LET and path length through a sensitive volume of fixed dimensions. The data suggest that the switch from MBE (molecular beam epitaxy) to MOCVD (metal-organic chemical vapor deposition) processing resulted in an increase in the thickness of the sensitive volume from 0.11 to 0.25 mu m.< ></description><subject>360605 - Materials- Radiation Effects</subject><subject>440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems</subject><subject>ALPHA SOURCES</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>CALCULATION METHODS</subject><subject>CHARGE COLLECTION</subject><subject>Charge measurement</subject><subject>CHARGED PARTICLES</subject><subject>CHEMICAL COATING</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>Current measurement</subject><subject>DEPOSITION</subject><subject>Energy exchange</subject><subject>ENERGY TRANSFER</subject><subject>EPITAXY</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>HARDENING</subject><subject>HETEROJUNCTIONS</subject><subject>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</subject><subject>ION SOURCES</subject><subject>IONS</subject><subject>JUNCTIONS</subject><subject>LET</subject><subject>MATERIALS SCIENCE</subject><subject>Measurement standards</subject><subject>MOCVD</subject><subject>Molecular beam epitaxial growth</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>OXYGEN IONS</subject><subject>PARTICLE SOURCES</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>PNICTIDES</subject><subject>RADIATION EFFECTS</subject><subject>RADIATION HARDENING</subject><subject>RADIATION SOURCES</subject><subject>SEMICONDUCTOR JUNCTIONS</subject><subject>SURFACE COATING</subject><subject>Switches</subject><subject>Testing</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNqN0E1LAzEQBuAgCtYqePUWPIiXbTP52GRPUkr9gIIH7Tmk2Vkb2W7qZlvw37u64tm5DMM8DMNLyCWwCQArplxMpJKiOCIjUMpkoLQ5JiPGwGSFLIpTcpbSez9KxdSI3M03rn1D6mNdo-9CbKhrSvqyWNGETQpdOITuk1axpQ9uOkt0HXaxdi0t8RA8pnNyUrk64cVvH5PV_eJ1_pgtnx-e5rNl5oXgXeZgbcA5IUqhQea5YEpx4JWupC-9YIYp4xB0LnlpfK6cygu2FlJWgEJLFGNyPdyNqQs2-dCh3_jYNP3TVkOuRV9jcjOgXRs_9pg6uw3JY127BuM-WW6g0Er_AyqQkgP08HaAvo0ptVjZXRu2rv20wOx33pYL-5N3T68GGhDxjw27Lxh_dyY</recordid><startdate>198912</startdate><enddate>198912</enddate><creator>Yaktieen, M.H.</creator><creator>McNulty, P.J.</creator><creator>Lynch, J.E.</creator><creator>Roth, D.R.</creator><creator>Salzman, J.F.</creator><creator>Yuan, J.H.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7U5</scope><scope>OTOTI</scope></search><sort><creationdate>198912</creationdate><title>Charge collection and SEU sensitivity for Ga/As bipolar devices</title><author>Yaktieen, M.H. ; McNulty, P.J. ; Lynch, J.E. ; Roth, D.R. ; Salzman, J.F. ; Yuan, J.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c332t-a1b81aa33d3714663055212f7f4cdc308058ae17642d8c65a5690b344f1e374e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>360605 - Materials- Radiation Effects</topic><topic>440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems</topic><topic>ALPHA SOURCES</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>CALCULATION METHODS</topic><topic>CHARGE COLLECTION</topic><topic>Charge measurement</topic><topic>CHARGED PARTICLES</topic><topic>CHEMICAL COATING</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>Current measurement</topic><topic>DEPOSITION</topic><topic>Energy exchange</topic><topic>ENERGY TRANSFER</topic><topic>EPITAXY</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>HARDENING</topic><topic>HETEROJUNCTIONS</topic><topic>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</topic><topic>ION SOURCES</topic><topic>IONS</topic><topic>JUNCTIONS</topic><topic>LET</topic><topic>MATERIALS SCIENCE</topic><topic>Measurement standards</topic><topic>MOCVD</topic><topic>Molecular beam epitaxial growth</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>OXYGEN IONS</topic><topic>PARTICLE SOURCES</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>PNICTIDES</topic><topic>RADIATION EFFECTS</topic><topic>RADIATION HARDENING</topic><topic>RADIATION SOURCES</topic><topic>SEMICONDUCTOR JUNCTIONS</topic><topic>SURFACE COATING</topic><topic>Switches</topic><topic>Testing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yaktieen, M.H.</creatorcontrib><creatorcontrib>McNulty, P.J.</creatorcontrib><creatorcontrib>Lynch, J.E.</creatorcontrib><creatorcontrib>Roth, D.R.</creatorcontrib><creatorcontrib>Salzman, J.F.</creatorcontrib><creatorcontrib>Yuan, J.H.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); 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The observed dependence of charge collection on the LET (linear energy transfer) and the angle of incidence of 4.4-MeV on oxygen ions is consistent with the hypothesis that the charge collected equals the product of LET and path length through a sensitive volume of fixed dimensions. The data suggest that the switch from MBE (molecular beam epitaxy) to MOCVD (metal-organic chemical vapor deposition) processing resulted in an increase in the thickness of the sensitive volume from 0.11 to 0.25 mu m.< ></abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/23.45439</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0018-9499 |
| ispartof | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), 1989-12, Vol.36 (6), p.2300-2304 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25144211 |
| source | IEEE Xplore (Online service) |
| subjects | 360605 - Materials- Radiation Effects 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems ALPHA SOURCES ARSENIC COMPOUNDS ARSENIDES CALCULATION METHODS CHARGE COLLECTION Charge measurement CHARGED PARTICLES CHEMICAL COATING CHEMICAL VAPOR DEPOSITION Current measurement DEPOSITION Energy exchange ENERGY TRANSFER EPITAXY GALLIUM ARSENIDES GALLIUM COMPOUNDS HARDENING HETEROJUNCTIONS INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ION SOURCES IONS JUNCTIONS LET MATERIALS SCIENCE Measurement standards MOCVD Molecular beam epitaxial growth MOLECULAR BEAM EPITAXY OXYGEN IONS PARTICLE SOURCES PHYSICAL RADIATION EFFECTS PNICTIDES RADIATION EFFECTS RADIATION HARDENING RADIATION SOURCES SEMICONDUCTOR JUNCTIONS SURFACE COATING Switches Testing |
| title | Charge collection and SEU sensitivity for Ga/As bipolar devices |
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