Density of states distribution in diamond thin films

Space-charge-limited hole currents in nominally undoped diamond thin films have been studied using thin, highly boron-doped (p+) diamond layers as injecting contacts. The results obtained from these p+-p-Si structures have been analyzed to determine, for the first time, the bulk distribution of loca...

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Bibliographic Details
Published in:Applied physics letters 1991-07, Vol.59 (4), p.455-457
Main Authors: Mort, J., Machonkin, M. A., Okumura, K.
Format: Article
Language:English
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Summary:Space-charge-limited hole currents in nominally undoped diamond thin films have been studied using thin, highly boron-doped (p+) diamond layers as injecting contacts. The results obtained from these p+-p-Si structures have been analyzed to determine, for the first time, the bulk distribution of localized states N(E) in polycrystalline diamond thin films. The values of N(E), covering an energy range of about 0.8–0.6 eV above the valence band, indicate that the density of states at 0.8 eV is about 1015 cm−3 eV−1 but rises rapidly, within the 0.2 eV, to about 1018 cm−3 eV−1.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105461