Dynamics of photoreflectance from undoped GaAs

We have studied the time constants involved in photoreflectance from several GaAs surface-intrinsic-n+ structures. The rise and fall times were determined from digital oscilloscope traces. We find that they depend on the intensity and wavelength of the pump and probe beams. The observed photoreflect...

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Bibliographic Details
Published in:Applied physics letters 1991-07, Vol.59 (3), p.321-323
Main Authors: SHEN, H, DUTTA, M, LUX, R, BUCHWALD, W, FOTIADIS, L, SACKS, R. N
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Infrared and raman spectra and scattering
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Physics
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Summary:We have studied the time constants involved in photoreflectance from several GaAs surface-intrinsic-n+ structures. The rise and fall times were determined from digital oscilloscope traces. We find that they depend on the intensity and wavelength of the pump and probe beams. The observed photoreflectance feature does not always follow a single exponential decay. The dependence of rise and fall times on intensity and wavelength of pump and probe beams can be accounted for by a theory based on majority-carrier flow. The characteristic time obtained can be used to determine the potential barrier height.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105583