A Few Techniques for Preparing Conductive Material Films for Sputtering-Type Electron Cyclotron Resonance Microwave Plasma

A few techniques are developed for preparing conductive material films for sputtering type electron cyclotron resonance microwave plasma. Microwave pressure window contamination, which is the most serious obstacle to conductive film preparation, can be avoided by using a vacuum microwave guide. Dens...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1989-03, Vol.28 (3), p.L503-L506
Main Authors: Matsuoka, M, Ono, K
Format: Article
Language:English
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Summary:A few techniques are developed for preparing conductive material films for sputtering type electron cyclotron resonance microwave plasma. Microwave pressure window contamination, which is the most serious obstacle to conductive film preparation, can be avoided by using a vacuum microwave guide. Dense plasmas of 10 11 cm -3 are obtained at a gas pressure of 10 -2 Pa, and several metal films, including Al, Mo, Cu, and Fe films, are continuously deposited. Much denser plasmas of 10 12 cm -3 are generated by high rate sputtering apparatus with an electric mirror, and films are deposited at rates of over 2000Å/min.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.28.l503