High-temperature thin-film diamond field-effect transistor fabricated using a selective growth method

Selective growth of boron-doped homoepitaxial diamond films was achieved using sputtered SiO/sub 2/ as a masking layer. The hole mobility of selectively grown films varied between 210 and 290 cm/sup 2//V-s for hole concentration between 1.0*10/sup 14/ and 6.9*10/sup 14/ cm/sup -3/. The technique was...

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Bibliographic Details
Published in:IEEE electron device letters 1991-02, Vol.12 (2), p.37-39
Main Authors: Gildenblat, G.S., Grot, S.A., Hatfield, C.W., Badzian, A.R.
Format: Article
Language:English
Subjects:
Applied sciences
Boron
Electronics
Exact sciences and technology
FETs
Insulation
Optical films
Plasma applications
Plasma measurements
Plasma temperature
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sputtering
Substrates
Thin film transistors
Transistors
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Summary:Selective growth of boron-doped homoepitaxial diamond films was achieved using sputtered SiO/sub 2/ as a masking layer. The hole mobility of selectively grown films varied between 210 and 290 cm/sup 2//V-s for hole concentration between 1.0*10/sup 14/ and 6.9*10/sup 14/ cm/sup -3/. The technique was used to fabricate a thin-film diamond field-effect transistor operational at 300 degrees C. The channel resistance of the device is an exponential function of temperature. In combination with the selective growth method, this device can be used as a starting point for the development of high-temperature diamond-based integrated circuits.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.75696