Highly sensitive split-contact magnetoresistor with AlAs/GaAs superlattice structures

A class of split-contact magnetoresistors made of a modulation-doped AlAs/GaAs superlattice grown on a semi-insulating GaAs substrate is reported. Their design geometry is reminiscent of the split-drain MAGFET, but their active sensor layer is the two-dimensional electron gas at the AlAs/GaAs hetero...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1989-09, Vol.36 (9), p.1639-1643
Main Authors: Sugiyama, Y., Soga, H., Tacano, M., Baltes, H.P.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Electrons
Epitaxial layers
Exact sciences and technology
Gallium arsenide
Gas detectors
Geometry
Heterojunctions
Magnetic sensors
Magnetic separation
Magnetic superlattices
Magnetoresistance
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A class of split-contact magnetoresistors made of a modulation-doped AlAs/GaAs superlattice grown on a semi-insulating GaAs substrate is reported. Their design geometry is reminiscent of the split-drain MAGFET, but their active sensor layer is the two-dimensional electron gas at the AlAs/GaAs heterojunction. A linear response of the relative current imbalance with high sensitivity is obtained below 1-T magnetic induction. Sensitivity is found to be as high as 46%/T for the preferable device geometry with a length-to-width ratio of 2 and split-contact separation-to-width ratio of 0.05, an order of magnitude higher than that of comparable MAGFET designs, The I/O efficiency of signal transformation is very large at small magnetic induction compared to that of conventional magnetoresistors. A simple formula for the sensitivity as a function of Hall mobility and geometry (length, width, and split-contact separation) is derived.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.34225