High-speed metal-semiconductor-metal waveguide photodetector on InP

We demonstrate high-speed performance of InGaAs barrier-enhanced metal-semiconductor-metal (M-S-M) Schottky barrier photodetectors monolithically integrated with double-heterostructure InP/InGaAsP/InP waveguides. Pulse response widths of 77 ps are recorded, with an associated 3 dB power bandwidth of...

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Bibliographic Details
Published in:Applied physics letters 1989, Vol.55 (21), p.2173-2175
Main Authors: SOOLE, J. B. D, SCHUMACHER, H, ESAGUI, R, LEBLANC, H. P, BHAT, R, KOZA, M. A
Format: Article
Language:English
Subjects:
Bolometer
infrared, submillimeter wave, microwave and radiowave receivers and detectors
Exact sciences and technology
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
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Summary:We demonstrate high-speed performance of InGaAs barrier-enhanced metal-semiconductor-metal (M-S-M) Schottky barrier photodetectors monolithically integrated with double-heterostructure InP/InGaAsP/InP waveguides. Pulse response widths of 77 ps are recorded, with an associated 3 dB power bandwidth of 1.7 GHz. Photodetectors acting as both ‘‘taps’’ of the waveguided signal and as ‘‘terminal’’ devices were fabricated. These detectors have application in receivers which are integrated with semiconductor waveguides for on-chip optical signal processing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.102073