Electronic properties of semiconductor nanostructures probed by scanning tunneling microscopy

We demonstrate the novel application of the scanning tunneling microscope to find and probe the electronic transport properties of single semiconductor nanostructures at temperatures from room temperature to as low as 1.5 K. The current-voltage characteristics of InGaAs/InAlAs resonant tunneling nan...

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Bibliographic Details
Published in:Applied physics letters 1991-05, Vol.58 (21), p.2402-2404
Main Authors: WEINER, J. S, HESS, H. F, ROBINSON, R. B, HAYES, T. R, SIVCO, D. L, CHO, A. Y, RANADE, M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
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Summary:We demonstrate the novel application of the scanning tunneling microscope to find and probe the electronic transport properties of single semiconductor nanostructures at temperatures from room temperature to as low as 1.5 K. The current-voltage characteristics of InGaAs/InAlAs resonant tunneling nanostructures clearly show negative differential resistance. From the dependence of the current on cross-sectional area the lateral depletion is estimated to be 300 Å.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104884