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Laser chemical vapor deposition direct patterning of insulating film

The 10 μm scale patterned SiO2 films with excellent insulating quality has been directly deposited by laser chemical vapor deposition projection printing. Leakage current through the SiO2 film was kept within permissible limits for large scale integration (LSI) functioning. This new local insulating...

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Bibliographic Details
Published in:Journal of applied physics 1991-02, Vol.69 (3), p.1744-1747
Main Authors: HIURA, Y, MORISHIGE, Y, KISHIDA, S
Format: Article
Language:English
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Summary:The 10 μm scale patterned SiO2 films with excellent insulating quality has been directly deposited by laser chemical vapor deposition projection printing. Leakage current through the SiO2 film was kept within permissible limits for large scale integration (LSI) functioning. This new local insulating scheme substantially extends the potential of laser direct writing circuit restructuring technology, such as in locally insulating two crossing interconnections on LSIs.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.347221