OMCVD-grown In(0.4)Al(0.6)As/InP quantum-well HEMT

The transport properties and device characteristics of pseudomorphic In(0.4)Al(0.6)As/InP modulation-doped heterostructures are investigated. The existence of a two-dimensional electron gas at the heterojunction was confirmed by Shubnikov-de Haas measurements. A high electron mobility transistor (HE...

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Bibliographic Details
Published in:IEEE electron device letters 1991-06, Vol.12, p.284-286
Main Authors: HONG, W O N-P, Bhat, Rajaram, DeRosa, F, HAYES, JOHNR, CHANG, G E E-K U N G
Format: Article
Language:English
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Summary:The transport properties and device characteristics of pseudomorphic In(0.4)Al(0.6)As/InP modulation-doped heterostructures are investigated. The existence of a two-dimensional electron gas at the heterojunction was confirmed by Shubnikov-de Haas measurements. A high electron mobility transistor (HEMT) having a gate length of 1.5 microns showed extrinsic transconductances and drain current densities as high as 160 mS/mm and 300 mA/mm, respectively. The HEMT also showed a very small output conductance of less than 2 mS/mm and high gate-drain breakdown voltage of larger than 15 V. These results show the great potential of this HEMT for high-voltage gain and high-power microwave applications. (I.E.)
ISSN:0741-3106