Low frequency and microwave characterization of submicron-gate In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As/In(0.52)Al( .48)As heterojunction metal-semiconductor field-effect transistors grown by molecular-b

This paper describes the fabication of doped-channel i- In(0.52)Al(0.48)As/n(+)-In(0.53)Ga(0.47)As/i-In(0.52)Al(0.48) As heterojunction MESFET lattices matched to the InP substrates with gate lengths in the submicron range and presents the results of characterization of the lattices. The high transc...

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Bibliographic Details
Published in:Journal of applied physics 1989-12, Vol.66, p.6168-6174
Main Authors: Kuang, J B, Tasker, P J, RATANAPHANYARAT, S, Schaff, W J, Eastman, L F
Format: Article
Language:English
Online Access:Get full text
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Summary:This paper describes the fabication of doped-channel i- In(0.52)Al(0.48)As/n(+)-In(0.53)Ga(0.47)As/i-In(0.52)Al(0.48) As heterojunction MESFET lattices matched to the InP substrates with gate lengths in the submicron range and presents the results of characterization of the lattices. The high transconductance, high voltage gain, and high cutoff frequencies demonstrated for this type of transistors indicate their suitability for high-frequency operations and a promising alternative for the GaAs MESFET technology. (I.S.)
ISSN:0021-8979