Microwave noise performance of InP/InGaAs heterostructure bipolar transistors

The authors report the first low-noise InP/InGaAs heterostructure bipolar transistor (HBT). Minimum noise figures of 0.46, 2.0, and 3.33 dB were measured at 2, 10, and 18 GHz, respectively. The noise performance of this InP/InGaAs HBT with an emitter size of 3.5*3.5 mu m/sup 2/ is compared to that f...

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Bibliographic Details
Published in:IEEE electron device letters 1989-10, Vol.10 (10), p.470-472
Main Authors: Chen, Y.-K., Nottenburg, R.N., Panish, M.B., Hamm, R.A., Humphrey, D.A.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar transistors
Electronics
Electrons
Exact sciences and technology
FETs
Heterojunction bipolar transistors
Indium gallium arsenide
Indium phosphide
Noise figure
Noise measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The authors report the first low-noise InP/InGaAs heterostructure bipolar transistor (HBT). Minimum noise figures of 0.46, 2.0, and 3.33 dB were measured at 2, 10, and 18 GHz, respectively. The noise performance of this InP/InGaAs HBT with an emitter size of 3.5*3.5 mu m/sup 2/ is compared to that for FETs having a 1- mu m gate length. The measured minimum noise figures agree well with calculated data using a modified Hawkins model. Broadband low-noise operation is observed because of the short transit time for injected nonequilibrium electrons to transverse the base and collector depletion region.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.43103